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IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = -10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = - 25V, f = 1MHz
Resistive Switching Times
V GS = -10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 3.3 Ω (External)
V GS = -10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
12
20
2845
1015
275
22
29
38
22
60
17
23
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.42 ° C/W
R thCS
(TO-3P)(TO-247)
(TO-220)
0.21
0.50
° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
I RM
V GS = 0V
Repetitive, pulse width limited by T JM
I F = - 26A, V GS = 0V, Note 1
I F = - 26A, -di/dt = -100A/ μ s
V R = - 50V, V GS = 0V
120
0.53
- 8.9
- 52
- 200
- 3.5
A
A
V
ns
μ C
A
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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